RTP E-O Q-Switch

Wide optical bandwidth (0.35-4.5μm)
Low insertion loss
Low half-wave voltage
 Low operating voltage
High extinction ratio
Very high laser damage threshold
No piezoelectric ringing effect
Precise switching in high repetitive rate laser with super-fast voltage drivers
Thermally compensated design for operating in large temperature range
 Compact design, very easy to mount and adjust
Quality RTP crystal with high environmental resistance and long service life


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Product Details

RTP (Rubidium Titanyl Phosphate - RbTiOPO4) is a robust crystal material suitable for a wide range of E-O applications. It has advantages of higher damage threshold (about 1.8 times that of KTP), high resistivity, high repetition rate, no hygroscopic or piezoelectric effect. RTP features good optical transparency from around 400nm to over 4µm and very importantly for intra-cavity laser operation, offers a high resistance to optical damage with power handling ~1GW/cm2 for 1ns pulses at 1064nm.

The E-O Q-switch (Pockels Cells) are based on two RTP crystals in a temperature compensating design

that enables the use of these devices within a wide temperature range from -60 °C up to +70 °C.

RTP Pockels cells are widely used in laser ranging, laser lidar, medical lasers and industrial lasers, etc.

WISOPTIC provides technical consultation, optimized design, customized test sample, and fast-delivery standard products of RTP Pockels cells for high repetition rate Q-switching & pulse-picking.

RTP EO Device Applications:

  • Q-switch

  • Phase modulator

  • Amplitude modulator

  • Pulse picker

  • Cavity dumper

  • Shutter

  • Attenuator

  • Deflector


Crystal Size

4x4x10 mm

6x6x10 mm

8x8x10 mm

Quantity of Crystals

2

2

2

Static Half-wave Voltage @ 1064 nm

X-cut: 1700 V

Y-cut: 1400 V

X-cut: 2500 V

Y-cut: 2100 V

X-cut: 3300 V

Y-cut: 2750 V

Extinction Ratio

X-cut: > 25 dB

Y-cut: > 23 dB

X-cut: > 23 dB

Y-cut: > 21 dB

X-cut: > 21 dB

Y-cut: > 20 dB

Capacitance

5~6 pF

Optical Transmission

> 99%

Damage Threshold

> 600 MW/cm2 for 10 ns pulses @ 1064 nm (AR coating)


RTP E-O Q-Switch.jpg

RTP E-O Q-Switch.jpg


RTP E-O Q-Switch.jpg


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