LN E-O Q-Switch

  • Large nonlinear optical coefficient

  • Large receiving angle

  • Small walk-off angle

  • Wide temperature and spectral bandwidth

  • High photoelectric coefficient and low dielectric constant

  • Non-absorbent, stable chemical and mechanical properties

  • Lowest loss Pockels cells with TOP quality LN (LiNbO3) crystals developed in-house

  • High quality surface polishing and coating

  • MgO doped LN and PPLN is available

  • Long and proven lifetime, 2 years guarantee

  • 20 year experience servicing the most demanding laser applications

  • KDP, KD*P, KTP, RTP, BBO, and LN are grown by WISOPTIC in-house

  • Being purchased and trusted by dozens of laser companies worldwide


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Product Details

LiNbO3 (Lithium Niobate, LN) crystal is a multifunctional material that integrates properties of piezoelectric, ferroelectric, pyroelectric, nonlinear, electro-optical, photoelastic, etc. LiNbO3 has good thermal stability and chemical stability.

Among the EO crystals, LN and DKDP are the two primary material that have been practical. DKDP crystals can be easily grown with a high optical homogeneity, which can satisfy the requirement of a large caliber Pockels cell. However, DKDP is water soluble and must be carefully protected from moisture, which complicates its fabrication and application. Additionally, the refractive index-matching fluid will disable DKDP Pockels cell at low temperature. However, a well-known requirement for Pockels cell is to operate in a wide temperature range, especially for military applications. Fortunately, LN crystals are nonhygroscopic, and they possess a low absorption coefficient and insert loss. In addition, they can operate stably in a wide temperature range, which makes LN crystals the main EO crystal applied in military applications.

LN electro-optic Q-switches are widely used in Er:YAG, Ho:YAG, Tm:YAG lasers, and are suitable for low-power Q-switched output, especially in laser ranging. We offer the most compact Q-switches for our customers.

LN Pockels cells can be very compact, and the half-wave voltage can be very low. By doping MgO in LiNbO3, the damage threshold of LN Pockels cells can been increased dramatically.


LN E-O Q-Switch.jpg


Dimensions

(2×2~9×9)×25 mm

Dimension Tolerance

± 0.1 mm

Angle Tolerance

± 0.5°

Flatness

< λ/8 @ 632.8 nm

Surface Quality

< 20/10 [S/D]

Parallelism

< 20”

Perpendicularity

≤ 5'

Chamfer

≤ 0.2mm @ 45°

Transmitted Wavefront Distortion

< λ/4 @ 632.8 nm

Capacitance

20 pF

Electrodes

Gold

λ/4 Voltage

~1.5 kV (@ 1064 nm)

Dynamic Extinction Ratio

20 dB (@ 1064 nm)

Clear Aperture

8.5 mm (> 90% central area)

Coating

AR coating: R < 0.2% @ 1064 nm, R < 0.5% @ 532 nm

Laser Damage Threshold

LN

100 MW/cm2 @ 10ns, 10Hz, 1064nm

MgO : LN

150 MW/cm2 @ 10ns, 10Hz, 1064nm


LN E-O Q-Switch.jpg

LN E-O Q-Switch.jpg


LN E-O Q-Switch.jpg


LN E-O Q-Switch.jpg



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