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Single-block Pulse-on LiNbO3 EO Q-switch
Large nonlinear optical coefficient
Large receiving angle
Small walk-off angle
Wide temperature and spectral bandwidth
High photoelectric coefficient and low dielectric constant
Non-absorbent, stable chemical and mechanical properties
Lowest loss Pockels cells with TOP quality LN (LiNbO3) crystals developed in-house
High quality surface polishing and coating
MgO doped LN and PPLN is available
Long and proven lifetime, 2 years guarantee
20 year experience servicing the most demanding laser applications
KDP, KD*P, KTP, RTP, BBO, and LN are grown by WISOPTIC in-house
Being purchased and trusted by dozens of laser companies worldwide
LN crystals are nonhygroscopic and have low absorption coefficient and insert loss. In addition, LN crystal can operate stably in a wide temperature range, which makes them the main EO crystal applied in military laser systems.
LN electro-optic Q-switches are widely used in Er:YAG, Ho:YAG, Tm:YAG lasers, and are suitable for low-power Q-switched output, especially in laser ranging. LN Pockels cells can be very compact, and the half-wave voltage can be very low. By doping MgO in LiNbO3, the damage threshold of LN Pockels cells can been increased dramatically. We offer the most compact Q-switches for our customers.
Dimensions | (2×2~9×9)×25 mm | |
Dimension Tolerance | ± 0.1 mm | |
Angle Tolerance | ± 0.5° | |
Flatness | < λ/8 @ 632.8 nm | |
Surface Quality | < 20/10 [S/D] | |
Parallelism | < 20” | |
Perpendicularity | ≤ 5' | |
Chamfer | ≤ 0.2mm @ 45° | |
Transmitted Wavefront Distortion | < λ/4 @ 632.8 nm | |
Capacitance | 20 pF | |
Electrodes | Gold | |
λ/4 Voltage | ~1.5 kV (@ 1064 nm) | |
Dynamic Extinction Ratio | 20 dB (@ 1064 nm) | |
Clear Aperture | 8.5 mm (> 90% central area) | |
Coating | AR coating: R < 0.2% @ 1064 nm, R < 0.5% @ 532 nm | |
Laser Damage Threshold | LN | 100 MW/cm2 @ 10ns, 10Hz, 1064nm |
MgO : LN | 150 MW/cm2 @ 10ns, 10Hz, 1064nm | |
