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KTP E-O Q-Switch
• Non-hygroscopic
• Excellent optical uniformity
• Wide optical bandwidth of 500-2800nm
• Low absorption losses at 1064nm wavelength (<250ppm/cm at 1064nm)
• High extinction ratio (>25 dB @ 633nm)
• Low half-wave voltage for electro-optics applications
• Minimum piezoelectric ringing compatible for 1MHz
• Rise time under 1ns to precise switching in high repetition rate laser
• High laser induced damage threshold (> 600MW/cm2 at 10Hz,10 ns at 1064nm)
• High resistivity and thermally compensated design to operate on large temperature range (-50℃ to +70℃)
HGTR (High Grey Track Resistance) KTP crystal developed by hydrothermal method overcomes the common phenomenon of electrochromism of the flux-grown KTP, thus has many advantages such as high electrical resistivity, low insertion loss, low half-wave voltage, high laser damage threshold, and wide transmission band. HGTR-KTP has many electro-optic applications such as Q-switching for high repetition rate lasers.
HGTR-KTP Crystals for EO Applications
Low insertion loss, low quarter-wave voltage
High repetition rate
Wide optical bandwidth
High damaging threshold
No piezo-electric ringing
Application: Q-switches, pulse picking and EO modulator
Sizes of one of the pair of KTP (mm) | X-cut | Y-cut | Electrical Resistivity (Ohm·cm) | ||
HWV @1064nm (V) | Extinction Ratio @ 633nm (dB) | HWV @1064nm (V) | Extinction Ratio @ 633nm (dB) | ||
3×3×10 | 1200 | > 25 | 1000 | > 20 | > 1011 |
4×4×10 | 1600 | > 25 | 1300 | > 20 | > 1011 |
5×5×10 | 2000 | > 25 | 1600 | > 20 | > 1011 |
6×6×10 | 2300 | > 25 | 1900 | > 20 | > 1011 |
7×7×10 | 2700 | > 25 | 2200 | > 20 | > 1011 |
8×8×10 | 3100 | > 25 | 2500 | > 20 | > 1011 |
9×9×10 | 3500 | > 25 | 2800 | > 20 | > 1011 |
Damage Threshold: > 600 MW/cm2 for 10 ns pulses @ 1064 nm (AR coating) | |||||
