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High Average Power High LIDT KTiOPO4 Q-Switch
• Non-hygroscopic
• Excellent optical uniformity
• Wide optical bandwidth of 500-2800nm
• Low absorption losses at 1064nm wavelength (<250ppm/cm at 1064nm)
• High extinction ratio (>25 dB @ 633nm)
• Low half-wave voltage for electro-optics applications
• Minimum piezoelectric ringing compatible for 1MHz
• Rise time under 1ns to precise switching in high repetition rate laser
• High laser induced damage threshold (> 600MW/cm2 at 10Hz,10 ns at 1064nm)
• High resistivity and thermally compensated design to operate on large temperature range (-50℃ to +70℃)
The improved hydrothermal-grown KTP crystal overcomes the common electrochromism damage of flux-grown KTP. The hydrothermal-grown KTP (HGTR-KTP, or GTR-KTP) has high damage threshold, large effective electro-optic coefficients and lower half-wave voltage. KTP EO Q-switches made by HGTR-KTP crystals utilize thermally compensated double crystal designs. They are mainly used in pulse lasers with narrow pulse width and high repetition frequency. Giving advantages of high extinction ratio, low half-wave voltage, and no piezoelectric ringing effect under high repetition frequency, KTP EO Q-switches are widely used in laser ranging, laser lidar, medical lasers and industrial lasers, etc.
WISOPTIC provides technical consultation, design service, customized test sample, and fast-delivery standard products of KTP EO Q-switches.
Sizes of one of the pair of KTP (mm) | X-cut | Y-cut | Electrical Resistivity (Ohm·cm) | ||
HWV @1064nm (V) | Extinction Ratio @ 633nm (dB) | HWV @1064nm (V) | Extinction Ratio @ 633nm (dB) | ||
3×3×10 | 1200 | > 25 | 1000 | > 20 | > 1011 |
4×4×10 | 1600 | > 25 | 1300 | > 20 | > 1011 |
5×5×10 | 2000 | > 25 | 1600 | > 20 | > 1011 |
6×6×10 | 2300 | > 25 | 1900 | > 20 | > 1011 |
7×7×10 | 2700 | > 25 | 2200 | > 20 | > 1011 |
8×8×10 | 3100 | > 25 | 2500 | > 20 | > 1011 |
9×9×10 | 3500 | > 25 | 2800 | > 20 | > 1011 |
Damage Threshold: > 600 MW/cm2 for 10 ns pulses @ 1064 nm (AR coating) | |||||
