Stoichiometric LN Crystal

Advantages of MgO:SLN
Low magnetic field - suitable for high precision and high speed phase matching process
20%-50% higher thermal conductivity greater than normal MgO:LN
High photorefractive damage threshold


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Product Details

Compared with congruent LN (cLN) crysal, the electro-optic coefficient, nonlinear optical coefficient, periodic polarization reversal voltage and applied photorefractive properties of stoichiometric LN (sLN) crystal are greatly improved. With such excellent physical properties and wide application prospects, sLN crystal has rapidly become a competitive optoelectronic material.

sLN crystals are expected to be thermodynamically stable up to their melting temperature at 1170°C, while keeping a larger
electrical resistivity than cLN crystals by one order of magnitude at any temperature. Promising bulk acoustic wave (BAW) signals were observed up to 880°C on sLN-based BAW resonators, with a stable quality factor Q up to 700°C.


Typical applications
Periodically polarized device
THz device


Description

Value

Absorption edge (20 cm-1)

303 (c=49.9)

Birefringence index (633nm)

-0.0900 (c=50.0)

Electro optic coefficient (pm/V)

R61=9.89 (c=49.95)

Nonlinear coefficient (pm/V)

17.5 (c=49.8)

OH- absorption peak/FWHM(cm-1

3465.5/2.9 (c=49.9)

Domain inversion voltage(kV/cm²)

0.8 (c=49.9)

Damage threshold

100MW/cm2@532nm

c in the table is the Li2O content of the crystal




Stoichiometric LN Crystal.jpg


Stoichiometric LN Crystal.jpg


Stoichiometric LN Crystal.jpg



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