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SLN Crystal for High Temperature SAW
Advantages of MgO:SLN
● Low magnetic field - suitable for high precision and high speed phase matching process
● 20%-50% higher thermal conductivity greater than normal MgO:LN
● High photorefractive damage threshold
Nominally pure stoichiometric shows lower photorefractive damage resistance than congruent crystal; however, stoichiometric crystals doped with MgO of more than 1.8 mol. % exhibit no measurable photorefractive damage at 532 nm to intensities of as much as . This remarkable damage resistance can be attributed not only to increased photoconductivity but also to decreased photogalvanic current. Stoichiometric also demonstrates the shortest absorption edge, 302 nm, and a single-domain nature with low scattering losses.
Typical applications
● Periodically polarized device
● THz device
Description | Value |
Absorption edge (20 cm-1) | 303 (c=49.9) |
Birefringence index (633nm) | -0.0900 (c=50.0) |
Electro optic coefficient (pm/V) | R61=9.89 (c=49.95) |
Nonlinear coefficient (pm/V) | 17.5 (c=49.8) |
OH- absorption peak/FWHM（cm-1） | 3465.5/2.9 (c=49.9) |
Domain inversion voltage（kV/cm²） | 0.8 (c=49.9) |
Damage threshold | 100MW/cm2@532nm |
c in the table is the Li2O content of the crystal |
