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1. 3 2 ~ 3 μm laser crystals doped with Cr2+ The mid-infrared luminescence of transition metal ions (Ni2+, Co2+, Cr2+, Fe2+, etc.) is based on 3d→3d transitions. According to the different types of sites occupied by transition metal ions in the host material, they can be divided into two categories: occupying octahedral sites with inversion symmetry (such as: Ni2+, Co2+ doped halides); Symmetric tetrahedral sites (such as: Ni2+, Co2+, Cr2+, Fe2+ doped II-VI compounds).

1. ~ 2 μm laser crystals doped with Tm3+ or Ho3+Tm3+ has a strong absorption near ~790 nm and a large absorption cross-section, so the ~790 nm commercial LD can be directly used as a pump source.

1. 2   ~ 2.3 μm laser crystals doped with Tm3+ Compared with the 2 μm band (3F4 → 3H6) of Tm3+, the 2.3 μm laser operation based on the 3H4 → 3H5 transition of the Tm3+ doped laser medium has the following advantages: (1) ~790 nm LD is directly pumped to the upper energy level of the laser. Tm3+ has a strong absorption around 790 nm (directly corresponding to the 3H4 → 3H6 transition), which can match the emission wavelength of the current mature commercial AlGaAs LD, so as to realize high-performance LD pumping all-solid-state high-efficiency 2.3 μm laser operation.

1.5  ~ 4 μm laser crystals doped with Fe2+ Compared with Cr:ZnSe, Fe:ZnSe has a smaller band gap and is prone to produce thermally induced multi-phonon quenching, so both laser power and efficiency are low. In 1999, Adams et al. realized the tunable wavelength of 3.98-4.54 μm at low temperature for the first time in Fe:ZnSe, and obtained laser output with slope efficiency of 8.2%. Pumped by Er3+ doped or Cr:ZnSe @ 2.7 μm laser, 4.0 μm wavelength and 1 W level continuous laser output have been obtained at room temperature. In 2020, Pushkin et al.

1. 4  ~ 3 μm laser crystals doped with Er2+, U4+, Ho3+, Dy3+  As an active ion, Ho3+ has achieved laser output in the ~3 μm band (5I6→5I7). In 1976, researchers first realized 2.9 μm laser output in Ho:YAP crystal. In 1990, Bowman et al. obtained 2.85 μm and 2.92 μm laser outputs in Ho:YAP crystals, and obtained 2.92 μm band-tuned laser outputs in Ho:YAP crystals in the following year. In 2017, Nie et al. pumped Ho, Pr: LiLuF4 crystals with a 1 150 nm Raman fiber laser, achieving 2.95 μm watt-level laser output for the first time. In 2018, Zhang et al.

3 The main application of lithium tantalate crystal3.1 SAW Wave filterThere are many studies on filters in SAW devices. Wave filters have the advantages of low transmission loss, high reliability, great manufacturing flexibility, analog/digital compatibility, excellent frequency selection characteristics, and can realize a variety of complex functions.

Conclusion Lithium tantalate material has a large pyroelectric coefficient, high Curie temperature, small dielectric loss factor, low heat melt per unit volume, small relative dielectric constant, and stable performance. It is a good ferroelectric and piezoelectric material. It also has extraordinary properties. Because of its linear optical properties, lithium tantalate (LT crystal, www.wisoptic.com) has gradually become a popular material used in communications, electronics and other fields.

In 1962, the American scientist McClung F J reported for the first time that the silver mirror of the ruby laser resonator had hole burning damage, which was the first public report on the laser damage of optical components. The subsequent invention of Q-switching technology and mode-locking technology increased the peak power of laser pulses by several orders of magnitude. The problem of laser damage runs through and affects the design and operation of lasers, and promotes the development of optical materials and optical component manufacturing technologies.

Nanoscale laser damage precursorsDifferent from microscopic defects, defects are called precursors here. Defects generally refer to observable microstructures that are different from the characteristics of the surrounding matrix materials, and are often observed by optical microscopy. The precursors mentioned in this article generally cannot be directly observed by optical methods, and there is no obvious difference in characteristics from the surrounding matrix materials.

Laser damage induced by microscopic defects in optical componentsNodule defect is a typical representative of microscopic defects, and it is one of the main discoveries in the study of laser damage to thin films in the 1990s. At present, a lot of research has been done on the electric field enhancement and damage characteristics of nodule defects and artificially implanted nodule defects. The damage mechanism of nodular defects has been deeply understood.The nodule defect is the main cause of damage to the fundamental frequency dielectric membrane element.