Neodymium-doped Yttrium Vanadate-manufacture,factory,supplier from China

1. 3 2 ~ 3 μm laser crystals doped with Cr2+ The mid-infrared luminescence of transition metal ions (Ni2+, Co2+, Cr2+, Fe2+, etc.) is based on 3d→3d transitions. According to the different types of sites occupied by transition metal ions in the host material, they can be divided into two categories: occupying octahedral sites with inversion symmetry (such as: Ni2+, Co2+ doped halides); Symmetric tetrahedral sites (such as: Ni2+, Co2+, Cr2+, Fe2+ doped II-VI compounds).

1. ~ 2 μm laser crystals doped with Tm3+ or Ho3+Tm3+ has a strong absorption near ~790 nm and a large absorption cross-section, so the ~790 nm commercial LD can be directly used as a pump source.

1.5  ~ 4 μm laser crystals doped with Fe2+ Compared with Cr:ZnSe, Fe:ZnSe has a smaller band gap and is prone to produce thermally induced multi-phonon quenching, so both laser power and efficiency are low. In 1999, Adams et al. realized the tunable wavelength of 3.98-4.54 μm at low temperature for the first time in Fe:ZnSe, and obtained laser output with slope efficiency of 8.2%. Pumped by Er3+ doped or Cr:ZnSe @ 2.7 μm laser, 4.0 μm wavelength and 1 W level continuous laser output have been obtained at room temperature. In 2020, Pushkin et al.

1. 2   ~ 2.3 μm laser crystals doped with Tm3+ Compared with the 2 μm band (3F4 → 3H6) of Tm3+, the 2.3 μm laser operation based on the 3H4 → 3H5 transition of the Tm3+ doped laser medium has the following advantages: (1) ~790 nm LD is directly pumped to the upper energy level of the laser. Tm3+ has a strong absorption around 790 nm (directly corresponding to the 3H4 → 3H6 transition), which can match the emission wavelength of the current mature commercial AlGaAs LD, so as to realize high-performance LD pumping all-solid-state high-efficiency 2.3 μm laser operation.

1. 4  ~ 3 μm laser crystals doped with Er2+, U4+, Ho3+, Dy3+  As an active ion, Ho3+ has achieved laser output in the ~3 μm band (5I6→5I7). In 1976, researchers first realized 2.9 μm laser output in Ho:YAP crystal. In 1990, Bowman et al. obtained 2.85 μm and 2.92 μm laser outputs in Ho:YAP crystals, and obtained 2.92 μm band-tuned laser outputs in Ho:YAP crystals in the following year. In 2017, Nie et al. pumped Ho, Pr: LiLuF4 crystals with a 1 150 nm Raman fiber laser, achieving 2.95 μm watt-level laser output for the first time. In 2018, Zhang et al.

The variant of refractive indices with temperature is an essential crystal parameter in nonlinear optics. it is well known that the wavelength at which 90° phase-matched 2nd-harmonic era happens depends on temperature. the variation of this wavelength with temperature can be predicted with a understanding of the variant of the refractive indices with temperature and is cited on this paper because the tuning price.

It’s well known that the DKDP crystal is very easy to be damaged by humidity, especially in  environment with high temperature. So ordinary DKDP Pockels cells can not be used in high temperature and high humidity environment, or their service life is very short. After more than two years of continuous technical research, WISOPTIC has successfully developed DKDP Pockels cells that can be used in lasers working in high temperature and high humidity environments.

Introduction 532nm solid-state lasers are widely used in industry and medicine. In the field of scientific research, continuous, high-stability 532nm green light and kilohertz, high-energy nanosecond 532nm laser are the most ideal pump source solutions for titanium sapphire oscillators and amplifiers respectively. The basic route is to use an 808nm/880nm semiconductor laser as the pump source, generate a 1064nm laser in an Nd:YVO4 or Nd:YAG crystal, and then perform frequency doubling (SHG) through a frequency doubling crystal to generate a continuous or pulsed 532nm laser.

3.4 Laser pretreatment of DKDP component The laser-damaged precursor of DKDP crystals (provided by WISOPTIC) is in the material body, so it is different from the removal of surface nodule defects in dielectric films. Laser pretreatment cannot remove the precursors in the body, but can only reduce the thermodynamic response of the precursors under laser radiation by improving their absorption intensity. There are still different opinions on this mechanism.

3.3 Laser pretreatment of dielectric film with large diameter Laser pretreatment technology is the last process before the supply of large-diameter components with dielectric film in NIF devices in the United States. LLNL provides their laser pretreatment device and specifications to each of their supplier of thin film components.