Neodymium-doped Yttrium Vanadate-manufacture,factory,supplier from China

Research BackgroundLithium Yttrium Fluoride (LiYF4, YLF) crystal has many excellent properties such as low melting point, low phonon energy, small thermal lens effect, natural polarization, etc. It is a laser matrix material with excellent performance. YLF belongs to the tetragonal structure of scheelite, and the space group is I41/a.

1. 3 2 ~ 3 μm laser crystals doped with Cr2+ The mid-infrared luminescence of transition metal ions (Ni2+, Co2+, Cr2+, Fe2+, etc.) is based on 3d→3d transitions. According to the different types of sites occupied by transition metal ions in the host material, they can be divided into two categories: occupying octahedral sites with inversion symmetry (such as: Ni2+, Co2+ doped halides); Symmetric tetrahedral sites (such as: Ni2+, Co2+, Cr2+, Fe2+ doped II-VI compounds).

1. ~ 2 μm laser crystals doped with Tm3+ or Ho3+Tm3+ has a strong absorption near ~790 nm and a large absorption cross-section, so the ~790 nm commercial LD can be directly used as a pump source.

1.5  ~ 4 μm laser crystals doped with Fe2+ Compared with Cr:ZnSe, Fe:ZnSe has a smaller band gap and is prone to produce thermally induced multi-phonon quenching, so both laser power and efficiency are low. In 1999, Adams et al. realized the tunable wavelength of 3.98-4.54 μm at low temperature for the first time in Fe:ZnSe, and obtained laser output with slope efficiency of 8.2%. Pumped by Er3+ doped or Cr:ZnSe @ 2.7 μm laser, 4.0 μm wavelength and 1 W level continuous laser output have been obtained at room temperature. In 2020, Pushkin et al.

1. 2   ~ 2.3 μm laser crystals doped with Tm3+ Compared with the 2 μm band (3F4 → 3H6) of Tm3+, the 2.3 μm laser operation based on the 3H4 → 3H5 transition of the Tm3+ doped laser medium has the following advantages: (1) ~790 nm LD is directly pumped to the upper energy level of the laser. Tm3+ has a strong absorption around 790 nm (directly corresponding to the 3H4 → 3H6 transition), which can match the emission wavelength of the current mature commercial AlGaAs LD, so as to realize high-performance LD pumping all-solid-state high-efficiency 2.3 μm laser operation.

1. 4  ~ 3 μm laser crystals doped with Er2+, U4+, Ho3+, Dy3+  As an active ion, Ho3+ has achieved laser output in the ~3 μm band (5I6→5I7). In 1976, researchers first realized 2.9 μm laser output in Ho:YAP crystal. In 1990, Bowman et al. obtained 2.85 μm and 2.92 μm laser outputs in Ho:YAP crystals, and obtained 2.92 μm band-tuned laser outputs in Ho:YAP crystals in the following year. In 2017, Nie et al. pumped Ho, Pr: LiLuF4 crystals with a 1 150 nm Raman fiber laser, achieving 2.95 μm watt-level laser output for the first time. In 2018, Zhang et al.

03 Experimental results and analysisWhen the green light input power is lower than 4 W, the matching temperature of the BBO crystal has little effect on the output power of the quadrupled 266 nm laser, and when the optimal power of ultraviolet light output is achieved, the temperature offset ΔT of the heating device also tends to be consistent; when the green light input power is greater than 8 W, the higher the matching temperature of the BBO crystal (www.wisoptic.com), the smaller the temperature offset ΔT of the heating device, and the higher the output power of the 266 nm la

Laser damage induced by microscopic defects in optical componentsNodule defect is a typical representative of microscopic defects, and it is one of the main discoveries in the study of laser damage to thin films in the 1990s. At present, a lot of research has been done on the electric field enhancement and damage characteristics of nodule defects and artificially implanted nodule defects. The damage mechanism of nodular defects has been deeply understood.The nodule defect is the main cause of damage to the fundamental frequency dielectric membrane element.

2.1 Manipulating and understanding laser damage precursors through material growth processesCombined with the statistical model, information such as precursor density and threshold distribution can be extracted from the damage probability curve, which indirectly reflects the information of the precursor. The analysis shows that the KDP crystal (www.wisoptic.com) mainly contains a precursor with a threshold distribution.

MEASUREMENT TECHNIQUEThe measurement technique consists primarily of a measurement of the variation of the angle of deviation with temperature. The crystals to be measured were 60-60-60° prisms approximately 15 mm on a side. They were attached to a temperature-controlled mount in a vacuum chamber. The temperature could be varied by varying the temperature of a liquid bath above the mount. Temperature was measured by thermocouples attached above and below the crystal. The crystal temperature was assumed to be the average of the two temperatures.