KD*P Q-switch-manufacture,factory,supplier from China

(Total 24 Products for KD*P Q-switch)
E-O Q-switch based on DKDP (KD*P) crystals are one of the most popular Pockels cells in the market.Deuterated potassium dihydrogen phosphate has good transmission from 390 nm to 1400 nm (0.39 μm – 1.4 μm) and combined with high electro-optical coefficients makes it suitable for Pockels cells.Highly deuterated DKDP (D>99% – WISOPTIC) is necessary to reach effective electro-optical response.
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Potassium Dihydrogen Phosphate (KDP) and Potassium Dideuterium Phosphate (KD*P, DKDP) crystals are among the most widley used nonlinear crystals. Both of these crystals are routinely used for the doubling, triplingand quadrupling of Nd:YAG lasers at room temperatures.
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The EO Q-switch (Pockels cell) is an electro-optic device in which the crystal produces linear changes in the birefringence of the crystal (in contrast to the Kerr Effect, which is quadratic with E). Pockels cells are essential components in various optical devices such as Q-switches for lasers, free space electro-optical modulators, free space switches.   WISOPTIC use highly deuterated DKDP (KD*P) crystal (D%>99%) to make high quality Q-switches with high laser induced damage threshold.
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Characterized by the excelent UV transmission, high damage threshold, and high birefringence, KDP (Potassium Dihydrogen Phosphate)  and KD*P (Potassium Dideuterium Phosphate) are useful commercial NLO materials for doubling, tripling and quadrupling of Nd:YAG laser at room temperature or an elevated temperature. They are also excellent electro-optic (EO) crystals with high electro-optic coefficients, widely used as electro-optical modulators and Pockels cells for Q-switched lasers.
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Potassium Dihydrogen Phosphate (KDP) and Potassium Dideuterium Phosphate (DKDP) are among the most widely-used commercial NLO materials, characterized by good UV transmission, high damage threshold, and high birefringence, though their NLO coefficients are relatively low. They are usually used for doubling, tripling or quadrupling of a Nd:YAG laser (at constant temperature).
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Basically all Pockels cell drivers are made based on solid-state electronic technology, using high voltage transistors such as MOSFETs. Multiple high voltage transistors may have to be stacked, taking care to achieve an even distribution of voltage across those. Instead of using some heavily isolated floating gate drive circuitry for the different transistors, one may use certain advanced ideas such as implementing so-called avalanche switch stacks involving avalanche diodes and/or avalanche bipolar transistors.Device lifetimes can be very long, provided that properly engineered
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    Potassium dideuterium phosphate DKDP (KD * P) crystal has low optical loss, high extinction ratio, and excellent electro-optical performance. DKDP Pockels cells are made by using the longitudinal effect of DKDP crystals. The modulation effect is stable and the pulse width is small.
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KDP (KH2PO4 ) and DKDP/KD*P (KD2PO4 ) are among the most widely-used commercial NLO materials. With good UV transmission, high damage threshold, and high birefringence, these material are usually used for doubling, tripling and quadrupling of Nd:YAG laser. With high E-O coefficient, KDP and DKDP crystals are also widely used to make Pockels cells for laser system, such as Nd:YAG, Nd:YLF, Ti-Sapphire, Alexandrite, etc.
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A Pockels cell driver is a high-voltage regulated power supply, either pulse or continuous, allowing to control a birefringence of an electro-optical crystal (KTP, KD*P, BBO, etc.) in order to drive the polarization direction of the light propagating through the crystal.WISOPTIC has developed and produces a variety of Pockels cell drivers for different applications: from very simple compact devices for q-switching to precise and powerful fast models for pulse picking, cavity damping, regenerative amplifier control, etc.
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Polarizing Beamsplitters (PBS) splits incident unpolarized light into two perpendicular linearly polarized light. Among them, p-polarized light passes through completely, while s-polarized light is reflected at 45 deg which makes the emitting direction of s-light vertical to p-light. Additionally, beamsplitters can be used in reverse to combine two different beams into a single one. Beamsplitters are often classified according to their construction:cube or plate.Cube PBS are fabricated using two typically right angle prisms.
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RTP possesses a large electro-optic impact for light propagating along either the x or y direction (electric powered along z). It functions right optical transparency from around 400nm to over 4µm. RTP offers a high resistance to optical damage with energy ~1Gw/cm2 for 1ns pulses at 1064nm. It is largely total lack of piezo-electric resonances at 200kHz and probable beyond. The primary distinction between RTP and BBO whilst used for Q-switching pertains to the common power degree at which the Q-switch is capable of be used practically.
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RTP (Rubidium Titanyl Phosphate - RbTiOPO4) is a robust crystal material suitable for a wide range of E-O applications. It has advantages of higher damage threshold (about 1.8 times that of KTP), high resistivity, high repetition rate, no hygroscopic or piezoelectric effect.
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LN crystals are nonhygroscopic and have low absorption coefficient and insert loss. In addition, LN crystal can operate stably in a wide temperature range, which makes them the main EO crystal applied in military laser systems.LN electro-optic Q-switches are widely used in Er:YAG, Ho:YAG, Tm:YAG lasers, and are suitable for low-power Q-switched output, especially in laser ranging. LN Pockels cells can be very compact, and the half-wave voltage can be very low. By doping MgO in LiNbO3, the damage threshold of LN Pockels cells can been increased dramatically.
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HGTR (High Grey Track Resistance) KTP crystal developed by hydrothermal method overcomes the common phenomenon of electrochromism of the flux-grown KTP, thus has many advantages such as high electrical resistivity, low insertion loss, low half-wave voltage, high laser damage threshold, and wide transmission band.
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The improved hydrothermal-grown KTP crystal overcomes the common electrochromism damage of flux-grown KTP. The hydrothermal-grown KTP (HGTR-KTP, or GTR-KTP) has high damage threshold, large effective electro-optic coefficients and lower half-wave voltage.  KTP EO Q-switches made by HGTR-KTP crystals utilize thermally compensated double crystal designs. They are mainly used in pulse lasers with narrow pulse width and high repetition frequency.
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BBO(Beta-Barium Borate, β-BaB2O4)based Pockels cells operate from approximately 0.2 - 1.65 µm and are not subject to tracking degradation. BBO exhibits low piezoelectric response, good thermal stability, and low absorption. Low piezoelectric ringing makes this Pockels cell attractive for the control of high-power and high-pulse repetition rate (hundreds of kilohertz, up to 1MHz) lasers.
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LiNbO3 (Lithium Niobate, LN) crystal is a multifunctional material that integrates properties of piezoelectric, ferroelectric, pyroelectric, nonlinear, electro-optical, photoelastic, etc. LiNbO3 has good thermal stability and chemical stability. Among the EO crystals, LN and DKDP are the two primary material that have been practical. DKDP crystals can be easily grown with a high optical homogeneity, which can satisfy the requirement of a large caliber Pockels cell.
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KTP Pockels are based on hydrothermal-grown high resistivity KTP crystals overcomes the common electrochromism damage of flux-grown KTP. Hydrothermal-grown KTP crystals have better optical homogeneity and higher damage threshold comparing to RTP crystals. This KTP crystal has large effective electro-optic coefficients and lower half-wave voltage. The Q-switch is built utilizing thermally compensated double crystal designs.
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RTP Pockels cell has a number of benefits compared to other electro-optic materials:Non hygroscopicLow switching voltageGood extinction ratioNo piezo and pyro-electric effectsUsed either as RTP Q-switch or RTP pulsepicker WISOPTIC has developed precise alignment techniques that enable us to offer our customers complete, plug-and-play RTP Pockels cell assemblies with a superior level of performance.Crystal Size4x4x10 mm6x6x10 mm8x8x10 mmQuantity of Crystals222Static Half-wave Voltage @ 1064 nmX-cut: 1700 VY-cut: 1400 VX-cut: 2500 VY-cut: 2100 VX-cut: 3300 VY-cut: 2750 VE
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Lithium Niobate (LiNbO3) is widely used  in fiber communication devices as birefringent crystal and used as electro-optic modulator and Q-switch for Nd:YAG, Nd:YLF and Ti:Sapphire lasers. It has good mechanical and physical properties and is ideal for optical polarizing components due to its wide transparency range and low cost. LiNbO3's applications for fiber communication include isolators, circulators, beam displacers, and other polarizing optics. The transverse modulation is mostly employed for LiNbO3 crystal.
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BBO features good optical transparency from around 200nm to over 2µm, offers a high resistance to optical damage with power handling >3GW/cm2 for 1ns pulses at 1064nm. It is possible to use BBO Pockels cells at average power levels of hundreds of watts and power densities of several kW/cm2. In addition, BBO Q-switches have very low levels of piezo-electric resonances.
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KTA (Potassium Titanyle Arsenate, KTiOAsO4 ) is a nonlinear optical crystal similar to KTP in which atom P is replaced by As. It has good non-linear optical and electro-optical properties, e.g.
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KTA (Potassium Titanyle Arsenate, KTiOAsO4 ) is a nonlinear optical crystal similar to KTP in which atom P is replaced by As. It has good non-linear optical and electro-optical properties, e.g.
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Cr:YAG (Chromium doped Ytterium Aluminum Garnet, Cr:Y3Al5O12)  crystal is an excellent material for passive Q-switching of Nd:YAG and  other Nd or Yb doped lasers in the wavelength range of 0.8 to 1.2 μm. One of the remarkable features of Cr:YAG is its high damage threshold (500-1000 MW/cm2). Its absorption band extends from 800 nm to 1200 nm and peaks at around 1060nm with a very large absorption cross section.
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3 The main application of lithium tantalate crystal3.3 E-O Q-SwitchThe basis of laser Q-switched technology is a special optical component - a fast intracavity optical switch generally called Q-switch. The Q value is an indicator for evaluating the quality of the optical resonant cavity. The higher the Q value, the lower the required pump threshold and the easier it is for the laser to oscillate. The purpose of laser Q-switching technology is to compress the pulse width and increase the peak power.
In 1962, the American scientist McClung F J reported for the first time that the silver mirror of the ruby laser resonator had hole burning damage, which was the first public report on the laser damage of optical components. The subsequent invention of Q-switching technology and mode-locking technology increased the peak power of laser pulses by several orders of magnitude. The problem of laser damage runs through and affects the design and operation of lasers, and promotes the development of optical materials and optical component manufacturing technologies.
IntroductionLithium tantalate (LiTaO3, referred to as LT), as an excellent multifunctional crystal material, has good piezoelectric, electro-optical and pyroelectric properties, and is ideal for making surface acoustic wave (SAW) filters, resonators, tuners, Q switches and pyroelectric detectors. Devices made from LT crystal (www.wisoptic.com) are widely used in the automotive electronics, 5G communications and infrared detectors, and have broad market prospects.In 1965, Ballman used the pulling method to grow LT single crystal for the first time.
1. 4  ~ 3 μm laser crystals doped with Er2+, U4+, Ho3+, Dy3+  As an active ion, Ho3+ has achieved laser output in the ~3 μm band (5I6→5I7). In 1976, researchers first realized 2.9 μm laser output in Ho:YAP crystal. In 1990, Bowman et al. obtained 2.85 μm and 2.92 μm laser outputs in Ho:YAP crystals, and obtained 2.92 μm band-tuned laser outputs in Ho:YAP crystals in the following year. In 2017, Nie et al. pumped Ho, Pr: LiLuF4 crystals with a 1 150 nm Raman fiber laser, achieving 2.95 μm watt-level laser output for the first time. In 2018, Zhang et al.
Nanoscale laser damage precursorsDifferent from microscopic defects, defects are called precursors here. Defects generally refer to observable microstructures that are different from the characteristics of the surrounding matrix materials, and are often observed by optical microscopy. The precursors mentioned in this article generally cannot be directly observed by optical methods, and there is no obvious difference in characteristics from the surrounding matrix materials.
Since defects induce laser damage, and defects are randomly distributed in optical components, the detection and evaluation of laser damage performance of optical components has become another important research content. The standard for laser damage threshold testing was established in the 1990s and has been continuously improved with the development of laser technology and optical materials.
2.2 Theoretical inversion cognition of precursor characteristics through damage morphologyThe typical damage morphology of multilayer dielectric films with picosecond pulse in the fundamental frequency band is high-density and small-scale. In order to understand the destruction process, we designed a multi-layer dielectric film system with high fundamental frequency and high reflection, and used a 1064 nm 30 ps laser to conduct a destruction experiment. Figure 9 shows a typical damage morphology.
Laser damage induced by microscopic defects in optical componentsAccording to the above numerical analysis results, it can be seen that cracks may be generated around the nodule seed and propagate along the radial direction.
3.2 Laser Pretreatment TechnologyLaser pretreatment is a technology that uses sub-threshold laser energy flow to process components before they are practically used. It can effectively improve the ability of some optical components to resist laser damage. The main function of laser pretreatment is to remove defects or reduce thermodynamic response under laser irradiation.
Conclusion Considering comprehensive factors such as wide absorption bandwidth, large absorption cross section, long upper energy level lifetime (ms to tens of ms) (see Table 2), ion cross relaxation, increased quantum efficiency, and mature LD pump source, Tm3+ in the 2 μm band, Ho3+ and Er3+ in the 3 μm band must be one of the most important and basic laser sources in the mid-infrared band from 2 to 20 μm, and will compete with Nd3+ and Yb3+ in the 1 μm band.
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