Erbium-Doped YAG-manufacture,factory,supplier from China

1. 3 2 ~ 3 μm laser crystals doped with Cr2+ The mid-infrared luminescence of transition metal ions (Ni2+, Co2+, Cr2+, Fe2+, etc.) is based on 3d→3d transitions. According to the different types of sites occupied by transition metal ions in the host material, they can be divided into two categories: occupying octahedral sites with inversion symmetry (such as: Ni2+, Co2+ doped halides); Symmetric tetrahedral sites (such as: Ni2+, Co2+, Cr2+, Fe2+ doped II-VI compounds).

1. ~ 2 μm laser crystals doped with Tm3+ or Ho3+Tm3+ has a strong absorption near ~790 nm and a large absorption cross-section, so the ~790 nm commercial LD can be directly used as a pump source.

1. 2   ~ 2.3 μm laser crystals doped with Tm3+ Compared with the 2 μm band (3F4 → 3H6) of Tm3+, the 2.3 μm laser operation based on the 3H4 → 3H5 transition of the Tm3+ doped laser medium has the following advantages: (1) ~790 nm LD is directly pumped to the upper energy level of the laser. Tm3+ has a strong absorption around 790 nm (directly corresponding to the 3H4 → 3H6 transition), which can match the emission wavelength of the current mature commercial AlGaAs LD, so as to realize high-performance LD pumping all-solid-state high-efficiency 2.3 μm laser operation.

1.5  ~ 4 μm laser crystals doped with Fe2+ Compared with Cr:ZnSe, Fe:ZnSe has a smaller band gap and is prone to produce thermally induced multi-phonon quenching, so both laser power and efficiency are low. In 1999, Adams et al. realized the tunable wavelength of 3.98-4.54 μm at low temperature for the first time in Fe:ZnSe, and obtained laser output with slope efficiency of 8.2%. Pumped by Er3+ doped or Cr:ZnSe @ 2.7 μm laser, 4.0 μm wavelength and 1 W level continuous laser output have been obtained at room temperature. In 2020, Pushkin et al.

1. 4  ~ 3 μm laser crystals doped with Er2+, U4+, Ho3+, Dy3+  As an active ion, Ho3+ has achieved laser output in the ~3 μm band (5I6→5I7). In 1976, researchers first realized 2.9 μm laser output in Ho:YAP crystal. In 1990, Bowman et al. obtained 2.85 μm and 2.92 μm laser outputs in Ho:YAP crystals, and obtained 2.92 μm band-tuned laser outputs in Ho:YAP crystals in the following year. In 2017, Nie et al. pumped Ho, Pr: LiLuF4 crystals with a 1 150 nm Raman fiber laser, achieving 2.95 μm watt-level laser output for the first time. In 2018, Zhang et al.

3. Experimental EquipmentThe overall device diagram of the frequency doubling experiment is shown in Figure 3(a). The 1064nm continuous light passes through a half-wave plate and is directly focused into the CPPLN crystal by a lens. The generated frequency doubling light passes through a 532nm transparent filter and is received and detected by a power meter. The self-built LD-pumped Nd:YVO4 continuous laser used in the experiment can reach a maximum output power of 22.53W.

3.3 Laser pretreatment of dielectric film with large diameter Laser pretreatment technology is the last process before the supply of large-diameter components with dielectric film in NIF devices in the United States. LLNL provides their laser pretreatment device and specifications to each of their supplier of thin film components.

Laser damage induced by microscopic defects in optical componentsNodule defect is a typical representative of microscopic defects, and it is one of the main discoveries in the study of laser damage to thin films in the 1990s. At present, a lot of research has been done on the electric field enhancement and damage characteristics of nodule defects and artificially implanted nodule defects. The damage mechanism of nodular defects has been deeply understood.The nodule defect is the main cause of damage to the fundamental frequency dielectric membrane element.

As the source manufacturer of many kinds of function crystals and the leading producer of DKDP Pockels cell in China, WISOPTIC provides high cost-effective products to its customers worldwide and gains substantial trust from all of its business partners. Every year over 40% of WISOPTIC's products are exported to Europe, UK, North America, Korea, Israel, etc.Normally WISOPTIC takes parts in at least one of the important exhibitions in the industry of photonics and laser, such as Laser World of Photonics (Munich/Shanghai), SPIE Photonics West (San Francisco), KIMES (Seoul), PHOTONIX (To

4. Experimental Result and Analysis4.1 Comparison of frequency doubling efficiency of CPPLN and LBOThe CPPLN crystal (www.wisoptic.com) we designed has the maximum frequency doubling efficiency in the working range between 15-40℃, so the subsequent analysis will be carried out around this range. In the same fundamental frequency light power gradient, the effect of temperature change on the frequency doubling efficiency of CPPLN is shown in Figure 4(a).