E-O Q-Switch-manufacture,factory,supplier from China

E-O Q-switch based on DKDP (KD*P) crystals are one of the most popular Pockels cells in the market.Deuterated potassium dihydrogen phosphate has good transmission from 390 nm to 1400 nm (0.39 μm – 1.4 μm) and combined with high electro-optical coefficients makes it suitable for Pockels cells.Highly deuterated DKDP (D>99% – WISOPTIC) is necessary to reach effective electro-optical response.

RTP (Rubidium Titanyl Phosphate - RbTiOPO4) is a robust crystal material suitable for a wide range of E-O applications. It has advantages of higher damage threshold (about 1.8 times that of KTP), high resistivity, high repetition rate, no hygroscopic or piezoelectric effect.

HGTR (High Grey Track Resistance) KTP crystal developed by hydrothermal method overcomes the common phenomenon of electrochromism of the flux-grown KTP, thus has many advantages such as high electrical resistivity, low insertion loss, low half-wave voltage, high laser damage threshold, and wide transmission band.

BBO（Beta-Barium Borate, β-BaB2O4）based Pockels cells operate from approximately 0.2 - 1.65 µm and are not subject to tracking degradation. BBO exhibits low piezoelectric response, good thermal stability, and low absorption. Low piezoelectric ringing makes this Pockels cell attractive for the control of high-power and high-pulse repetition rate (hundreds of kilohertz, up to 1MHz) lasers.

LiNbO3 (Lithium Niobate, LN) crystal is a multifunctional material that integrates properties of piezoelectric, ferroelectric, pyroelectric, nonlinear, electro-optical, photoelastic, etc. LiNbO3 has good thermal stability and chemical stability. Among the EO crystals, LN and DKDP are the two primary material that have been practical. DKDP crystals can be easily grown with a high optical homogeneity, which can satisfy the requirement of a large caliber Pockels cell.

The EO Q-switch (Pockels cell) is an electro-optic device in which the crystal produces linear changes in the birefringence of the crystal (in contrast to the Kerr Effect, which is quadratic with E). Pockels cells are essential components in various optical devices such as Q-switches for lasers, free space electro-optical modulators, free space switches.   WISOPTIC use highly deuterated DKDP (KD*P) crystal (D%>99%) to make high quality Q-switches with high laser induced damage threshold.

RTP (Rubidium Titanyl Phosphate - RbTiOPO4) is a very desirable crystal material for E-O modulators and Q-switches. It has advantages of higher damage threshold (about 1.8 times that of KTP), high resistivity, high repetition rate, no hygroscopic or piezoelectric effect. As biaxial crystals, RTP’s natural birefringence needs to be compensated by use of two crystal rods specially oriented so that beam passes along the X-direction or Y-direction.

LiNbO3 crystal is a low cost photoelectric material with good mechanical and physical properties as well as high optical homogeneity. It has been widely used as frequency doublers for wavelength > 1mm and optical parametric oscillators (OPOs) pumped at 1064nm as well as quasi-phase-matched (QPM) devices. With preferable E-O coefficients, LiNbO3 crystal has become the most commonly used material for Q-switches and phase modulators, waveguide substrate, and surface acoustic wave (SAW) wafers, etc.

RTP crystal is widely used for Electro-Optic applications whenever low switching voltages are required. e.g. in laser Q-switching system with high frequency repetition, high power and narrow pulse width. RTP E-O devices are not only used in laser micromachining and laser ranging, but also in major scientific exploration projects due to their excellent comprehensive performance.As RTP is transparent from 400nm to 3.5µm, it can be used in multiple types of laser such as Er:YAG laser at 2.94µm with fairly good efficiency.

RTP possesses a large electro-optic impact for light propagating along either the x or y direction (electric powered along z). It functions right optical transparency from around 400nm to over 4µm. RTP offers a high resistance to optical damage with energy ~1Gw/cm2 for 1ns pulses at 1064nm. It is largely total lack of piezo-electric resonances at 200kHz and probable beyond. The primary distinction between RTP and BBO whilst used for Q-switching pertains to the common power degree at which the Q-switch is capable of be used practically.

KTP Crystal Features• Large Nonlinear Optical (NLO) Coefficients• Wide Phase-matching Acceptance Angle• Broad Temperature and Spectral Bandwidth• High Electro-Optic (E-O) Coefficients • Nonhygroscopic, Good Chemical and Mechanical Properties • Relatively High Damage Threshold for E-O modulatorKTP Crystal Applications1. SHG of Nd:Laser - KTP is the most commonly used material for frequency doubling of Nd:YAG and other Nd-doped lasers, particularly when the power density is at a low or medium level.

KDP (KH2PO4 ) and DKDP/KD*P (KD2PO4 ) are among the most widely-used commercial NLO materials. With good UV transmission, high damage threshold, and high birefringence, these material are usually used for doubling, tripling and quadrupling of Nd:YAG laser. With high E-O coefficient, KDP and DKDP crystals are also widely used to make Pockels cells for laser system, such as Nd:YAG, Nd:YLF, Ti-Sapphire, Alexandrite, etc.

LN crystals are nonhygroscopic and have low absorption coefficient and insert loss. In addition, LN crystal can operate stably in a wide temperature range, which makes them the main EO crystal applied in military laser systems.LN electro-optic Q-switches are widely used in Er:YAG, Ho:YAG, Tm:YAG lasers, and are suitable for low-power Q-switched output, especially in laser ranging. LN Pockels cells can be very compact, and the half-wave voltage can be very low. By doping MgO in LiNbO3, the damage threshold of LN Pockels cells can been increased dramatically.

RTP (RbTiOPO4) is an isomorph of KTP crystal. RTP has many advantages e.g. large nonlinear optical coefficient, large E-O coefficient, high damage threshold (about 1.8 times of KTP), high resistivity, high repetition rate, no hygroscopy and no induced piezo-electric effect with electrical signals up to 60 kHz. The transmission range of RTP is 350 nm to 4500 nm.RTP crystal is widely used in laser Q-switching system with high frequency repetition, high power and narrow pulse width.

Lithium  Niobate (LN) crystal has excellent electro-optic, acousto-optic,  piezoelectric and nonlinear properties. More and more attention has been paid on its application in military technology. LN crystal has large nonlinear optical coefficient and can easily achieve non-critical phase matching. As an E-O material, LN crystal has been used as an important optical waveguide material.

The improved hydrothermal-grown KTP crystal overcomes the common electrochromism damage of flux-grown KTP. The hydrothermal-grown KTP (HGTR-KTP, or GTR-KTP) has high damage threshold, large effective electro-optic coefficients and lower half-wave voltage.  KTP EO Q-switches made by HGTR-KTP crystals utilize thermally compensated double crystal designs. They are mainly used in pulse lasers with narrow pulse width and high repetition frequency.

RTP (RbTiOPO4) is an isomorph of KTP crystal. RTP single crystals are grown in WISOPTIC by a slow-cooling flux method. RTP has many advantages e.g. large nonlinear optical coefficient, large E-O coefficient, high damage threshold (about 1.8 times of KTP), high resistivity, high repetition rate, no hygroscopy and no induced piezo-electric effect with electrical signals up to 60 kHz.

KTP Pockels are based on hydrothermal-grown high resistivity KTP crystals overcomes the common electrochromism damage of flux-grown KTP. Hydrothermal-grown KTP crystals have better optical homogeneity and higher damage threshold comparing to RTP crystals. This KTP crystal has large effective electro-optic coefficients and lower half-wave voltage. The Q-switch is built utilizing thermally compensated double crystal designs.

RTP Pockels cell has a number of benefits compared to other electro-optic materials:Non hygroscopicLow switching voltageGood extinction ratioNo piezo and pyro-electric effectsUsed either as RTP Q-switch or RTP pulsepicker WISOPTIC has developed precise alignment techniques that enable us to offer our customers complete, plug-and-play RTP Pockels cell assemblies with a superior level of performance.Crystal Size4x4x10 mm6x6x10 mm8x8x10 mmQuantity of Crystals222Static Half-wave Voltage @ 1064 nmX-cut: 1700 VY-cut: 1400 VX-cut: 2500 VY-cut: 2100 VX-cut: 3300 VY-cut: 2750 VE

Lithium Niobate (LiNbO3) is widely used  in fiber communication devices as birefringent crystal and used as electro-optic modulator and Q-switch for Nd:YAG, Nd:YLF and Ti:Sapphire lasers. It has good mechanical and physical properties and is ideal for optical polarizing components due to its wide transparency range and low cost. LiNbO3's applications for fiber communication include isolators, circulators, beam displacers, and other polarizing optics. The transverse modulation is mostly employed for LiNbO3 crystal.

BBO features good optical transparency from around 200nm to over 2µm, offers a high resistance to optical damage with power handling >3GW/cm2 for 1ns pulses at 1064nm. It is possible to use BBO Pockels cells at average power levels of hundreds of watts and power densities of several kW/cm2. In addition, BBO Q-switches have very low levels of piezo-electric resonances.

Cr:YAG (Chromium doped Ytterium Aluminum Garnet, Cr:Y3Al5O12)  crystal is an excellent material for passive Q-switching of Nd:YAG and  other Nd or Yb doped lasers in the wavelength range of 0.8 to 1.2 μm. One of the remarkable features of Cr:YAG is its high damage threshold (500-1000 MW/cm2). Its absorption band extends from 800 nm to 1200 nm and peaks at around 1060nm with a very large absorption cross section.

Basically all Pockels cell drivers are made based on solid-state electronic technology, using high voltage transistors such as MOSFETs. Multiple high voltage transistors may have to be stacked, taking care to achieve an even distribution of voltage across those. Instead of using some heavily isolated floating gate drive circuitry for the different transistors, one may use certain advanced ideas such as implementing so-called avalanche switch stacks involving avalanche diodes and/or avalanche bipolar transistors.Device lifetimes can be very long, provided that properly engineered

Items Specifications Material CTH:YAG (Cr, Tm, Ho - doped YAG)Doping ExtentCr: 0.3~1.2 at%; Tm: 5~6 at%; Ho: 0.3~0.4 at% Crystalline Direction[111] (± 5°)DimensionsDia 3~6 (+0/-0.05) mm × 50~120 (±0.5) mm (customized)Extinction Ratio> 25 dBSingle Pass WFD < λ/8 @633 nm over central areaSurface Quality 10-5 [s-d] per MIL-O-13830BClear Aperture> 90% over central areaEnd-surface Parallelism< 20"Perpendicularity< 5'End-surface Flatness< λ/8 @633 nmChamfer0.2 ± 0.05 mm × 45°Laser CoatingAR/AR @ 209