DKDP Pockels Cell-manufacture,factory,supplier from China

It’s well known that the DKDP crystal is very easy to be damaged by humidity, especially in  environment with high temperature. So ordinary DKDP Pockels cells can not be used in high temperature and high humidity environment, or their service life is very short. After more than two years of continuous technical research, WISOPTIC has successfully developed DKDP Pockels cells that can be used in lasers working in high temperature and high humidity environments.

As the source manufacturer of many kinds of function crystals and the leading producer of DKDP Pockels cell in China, WISOPTIC provides high cost-effective products to its customers worldwide and gains substantial trust from all of its business partners. Every year over 40% of WISOPTIC's products are exported to Europe, UK, North America, Korea, Israel, etc.Normally WISOPTIC takes parts in at least one of the important exhibitions in the industry of photonics and laser, such as Laser World of Photonics (Munich/Shanghai), SPIE Photonics West (San Francisco), KIMES (Seoul), PHOTONIX (To

3.4 Laser pretreatment of DKDP component The laser-damaged precursor of DKDP crystals (provided by WISOPTIC) is in the material body, so it is different from the removal of surface nodule defects in dielectric films. Laser pretreatment cannot remove the precursors in the body, but can only reduce the thermodynamic response of the precursors under laser radiation by improving their absorption intensity. There are still different opinions on this mechanism.

WISOPTIC is using its newly-set coating machine to do in-house vacuum coatings on crystals and optical components.With our own coating machine and technique, we can provide customers products with excellent quality, e.g. higher surface quality, higher transmittance, and higher LIDT etc.Sorts of dielectric coatings (e.g. AR, HR, PR) are available for crystals (KDP/DKDP, KTP, RTP, BBO, LBO, LN, Nd:YAG, etc) and optical components (laser windows, mirrors, PBS, etc).

Based on the basic principles of laser damage, researchers have found a breaking through point to solve the problem of laser damage to optical components. But it is very difficult to effectively suppress the source of laser damage in the manufacturing process. Given the variety and complexity of the manufacturing process of optical components, it is necessary to establish the link between the defect formation and the manufacturing process.

1. ~ 2 μm laser crystals doped with Tm3+ or Ho3+Tm3+ has a strong absorption near ~790 nm and a large absorption cross-section, so the ~790 nm commercial LD can be directly used as a pump source.

2-5 μm mid-infrared laser crystals have important applications in directional infrared countermeasures, anti-terrorism, biomedicine, environmental monitoring, optical communications, strong field physics, laser fusion, and mid-to-far infrared (nonlinear frequency conversion) basic light sources, etc. With the related development of the pump source technology of semiconductor laser (laser diode, LD), solid-state laser and fiber laser (including resonant pump), mid-infrared crystal has become one of the four main laser crystals developed currently.

Introduction 532nm solid-state lasers are widely used in industry and medicine. In the field of scientific research, continuous, high-stability 532nm green light and kilohertz, high-energy nanosecond 532nm laser are the most ideal pump source solutions for titanium sapphire oscillators and amplifiers respectively. The basic route is to use an 808nm/880nm semiconductor laser as the pump source, generate a 1064nm laser in an Nd:YVO4 or Nd:YAG crystal, and then perform frequency doubling (SHG) through a frequency doubling crystal to generate a continuous or pulsed 532nm laser.

1. 3 2 ~ 3 μm laser crystals doped with Cr2+ The mid-infrared luminescence of transition metal ions (Ni2+, Co2+, Cr2+, Fe2+, etc.) is based on 3d→3d transitions. According to the different types of sites occupied by transition metal ions in the host material, they can be divided into two categories: occupying octahedral sites with inversion symmetry (such as: Ni2+, Co2+ doped halides); Symmetric tetrahedral sites (such as: Ni2+, Co2+, Cr2+, Fe2+ doped II-VI compounds).

1.5  ~ 4 μm laser crystals doped with Fe2+ Compared with Cr:ZnSe, Fe:ZnSe has a smaller band gap and is prone to produce thermally induced multi-phonon quenching, so both laser power and efficiency are low. In 1999, Adams et al. realized the tunable wavelength of 3.98-4.54 μm at low temperature for the first time in Fe:ZnSe, and obtained laser output with slope efficiency of 8.2%. Pumped by Er3+ doped or Cr:ZnSe @ 2.7 μm laser, 4.0 μm wavelength and 1 W level continuous laser output have been obtained at room temperature. In 2020, Pushkin et al.