DKDP Pockels Cell Driver-manufacture,factory,supplier from China

It’s well known that the DKDP crystal is very easy to be damaged by humidity, especially in  environment with high temperature. So ordinary DKDP Pockels cells can not be used in high temperature and high humidity environment, or their service life is very short. After more than two years of continuous technical research, WISOPTIC has successfully developed DKDP Pockels cells that can be used in lasers working in high temperature and high humidity environments.

As the source manufacturer of many kinds of function crystals and the leading producer of DKDP Pockels cell in China, WISOPTIC provides high cost-effective products to its customers worldwide and gains substantial trust from all of its business partners. Every year over 40% of WISOPTIC's products are exported to Europe, UK, North America, Korea, Israel, etc.Normally WISOPTIC takes parts in at least one of the important exhibitions in the industry of photonics and laser, such as Laser World of Photonics (Munich/Shanghai), SPIE Photonics West (San Francisco), KIMES (Seoul), PHOTONIX (To

3.4 Laser pretreatment of DKDP component The laser-damaged precursor of DKDP crystals (provided by WISOPTIC) is in the material body, so it is different from the removal of surface nodule defects in dielectric films. Laser pretreatment cannot remove the precursors in the body, but can only reduce the thermodynamic response of the precursors under laser radiation by improving their absorption intensity. There are still different opinions on this mechanism.

3 Functional laser damage evaluation and laser pretreatment technologyWhether it is microscopic defects or nanoscopic laser damage precursors, the distribution and amount in optical materials or components are closely related to the manufacturing process. Low-defect processing and manufacturing technologies have played an important role in promoting the manufacture of high-power laser materials and components. However, as the largest laser project, the ICF laser driver has the largest number and size of optical components so far.

WISOPTIC is using its newly-set coating machine to do in-house vacuum coatings on crystals and optical components.With our own coating machine and technique, we can provide customers products with excellent quality, e.g. higher surface quality, higher transmittance, and higher LIDT etc.Sorts of dielectric coatings (e.g. AR, HR, PR) are available for crystals (KDP/DKDP, KTP, RTP, BBO, LBO, LN, Nd:YAG, etc) and optical components (laser windows, mirrors, PBS, etc).

3.3 Laser pretreatment of dielectric film with large diameter Laser pretreatment technology is the last process before the supply of large-diameter components with dielectric film in NIF devices in the United States. LLNL provides their laser pretreatment device and specifications to each of their supplier of thin film components.

Conclusion Considering comprehensive factors such as wide absorption bandwidth, large absorption cross section, long upper energy level lifetime (ms to tens of ms) (see Table 2), ion cross relaxation, increased quantum efficiency, and mature LD pump source, Tm3+ in the 2 μm band, Ho3+ and Er3+ in the 3 μm band must be one of the most important and basic laser sources in the mid-infrared band from 2 to 20 μm, and will compete with Nd3+ and Yb3+ in the 1 μm band.

1. 4  ~ 3 μm laser crystals doped with Er2+, U4+, Ho3+, Dy3+  As an active ion, Ho3+ has achieved laser output in the ~3 μm band (5I6→5I7). In 1976, researchers first realized 2.9 μm laser output in Ho:YAP crystal. In 1990, Bowman et al. obtained 2.85 μm and 2.92 μm laser outputs in Ho:YAP crystals, and obtained 2.92 μm band-tuned laser outputs in Ho:YAP crystals in the following year. In 2017, Nie et al. pumped Ho, Pr: LiLuF4 crystals with a 1 150 nm Raman fiber laser, achieving 2.95 μm watt-level laser output for the first time. In 2018, Zhang et al.

03 Experimental results and analysisBy optimizing the cavity length parameters of Nd:YVO4 (www.wisoptic.com) laser under high-power pump injection, a 1064 nm high peak power narrow pulse laser output with an average power of 26 W, a repetition frequency of 20 kHz, and a single pulse width of 5 ns was obtained when the 888 nm pump light power was 65 W; after the 1064 nm fundamental frequency infrared light was doubled by the LBO crystal, a 532 nm laser with a maximum power of 16 W was finally obtained, and the infrared to green light conversion efficiency reached 61.5%.

2.2 Theoretical inversion cognition of precursor characteristics through damage morphologyThe typical damage morphology of multilayer dielectric films with picosecond pulse in the fundamental frequency band is high-density and small-scale. In order to understand the destruction process, we designed a multi-layer dielectric film system with high fundamental frequency and high reflection, and used a 1064 nm 30 ps laser to conduct a destruction experiment. Figure 9 shows a typical damage morphology.